e-ISSN : 0975-4024 p-ISSN : 2319-8613   
CODEN : IJETIY    

International Journal of Engineering and Technology

Home
IJET Topics
Call for Papers 2021
Author Guidelines
Special Issue
Current Issue
Articles in Press
Archives
Editorial Board
Reviewer List
Publication Ethics and Malpractice statement
Authors Publication Ethics
Policy of screening for plagiarism
Open Access Statement
Terms and Conditions
Contact Us

ABSTRACT

ISSN: 0975-4024

Title : DESIGN AND ANALYSIS OF ADDER CIRCUITS USING LEAR SLEEP TECHNIQUE IN CMOS TECHNOLOGIES
Authors : Aishwarya.S, Ravi.T, Kannan.V
Keywords : Power dissipation, leakage power reduction techniques, LEAR Sleep techniques, CMOS design.
Issue Date : Jun-Jul 2015
Abstract :
Due to millions of integration of components and shrinking process technology, nowadays leakage power tends to play a major role in total power consumption. In this paper various existing leakage power reduction techniques such as full sleep, sleepy stack, dual sleep, sleepy keeper and dual stack are analysed and two new techniques are proposed to reduce the leakage power in digital circuits by generating transistor grating technology. The digital circuits such as half adder and Full adder are designed using the proposed techniques in 32nm, 22nm and 16nm CMOS technologies and their performances are analysed.
Page(s) : 1013-1018
ISSN : 0975-4024
Source : Vol. 7, No.3